P-TYPE INP GROWN AT LOW-TEMPERATURES BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE)

Authors
DOTOR ML HUERTAS P POSTIGO PA GOLMAYO D BRIONES F
Citation
Ml. Dotor et al., P-TYPE INP GROWN AT LOW-TEMPERATURES BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE), Electronics Letters, 29(14), 1993, pp. 1270-1271
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
14
Year of publication
1993
Pages
1270 - 1271
Database
ISI
SICI code
0013-5194(1993)29:14<1270:PIGALB>2.0.ZU;2-N
Abstract
Residual doping of InP layers grown at low temperature by atomic layer molecular beam epitaxy (ALMBE) has been reduced down to approximately 10(16) cm-3 by control of phosphorus pulses, and then, p-type InP lay ers doped with Be have been grown at substrate temperatures of 305-340 -degrees-C. Epilayers show low compensation and mobilities that are co mparable to bulk p-type InP.