20 GHZ BANDWIDTH 1.5-MU-M WAVELENGTH VUG DFB LASER USING A ZERO NET STRAIN INXGA1-XASYP1-Y WELL ACTIVE STRUCTURE GROWN AT CONSTANT-Y

A 20 GHz bandwidth VUG (V-on-U groove) DFB GaInAsP laser based on a ze ro net strain quaternary quantum well active structure grown at a cons tant phosphorus/arsenic ratio is described. The active structure is de signed such that emission wavelength has excellent thermal stability i n order to avoid gain peak shifts during two epitaxial regrowths. Usin g this active material, the Letter shows that high-performance high-sp eed DFB devices can be designed and fabricated.