LOW-THRESHOLD BURIED HETEROSTRUCTURE VERTICAL-CAVITY SURFACE-EMITTINGLASER

We report the first low threshold, buried heterostructure (BH) vertica l cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and th reshold current density of 490 A/cm2 are achieved with 8 and 32 mum di am BH VCSELs, respectively. Both 8 and 16 mum diam BH VCSELs emit a si ngle TEM00 fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [011BAR] crystal orientation.