LOW-TEMPERATURE SYNTHESIS AND PROPERTIES OF LITHIUM-NIOBATE THIN-FILMS

Thin films of lithium niobate were deposited on silicon (100) by a sol -gel technique and were annealed in oxygen at 400-degrees-C. The annea led films were characterized by x-ray diffraction and transmission ele ctron microscopy which showed crystallization to LiNbO3, a preferred o rientation of the films, and an average grain size of about 0.5 mum. E lectrical characterization of the films in the metal-ferroelectric-sem iconductor configuration showed evidence for ferroelectricity via the hysteresis loop. The dielectric constant and dissipation factor were m easured at frequencies from 10 Hz to 10 MHz with a dielectric constant of 35 and dissipation factor of 0.004 at 100 kHz. The current-voltage characteristics of the films exhibited asymmetric behavior, indicatin g a possible Schottky barrier and showed a leakage current density of 1. 1 X 10(-4) A/cm2 at 3 V.