CONFINEMENT OF HIGH BE DOPING LEVELS IN ALINAS GAINAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH/

Authors
METZGER RA HAFIZI M STANCHINA WE LIU T WILSON RG MCCRAY LG
Citation
Ra. Metzger et al., CONFINEMENT OF HIGH BE DOPING LEVELS IN ALINAS GAINAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH/, Applied physics letters, 63(10), 1993, pp. 1360-1362
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
10
Year of publication
1993
Pages
1360 - 1362
Database
ISI
SICI code
0003-6951(1993)63:10<1360:COHBDL>2.0.ZU;2-5
Abstract
A1InAs/GaInAs npn heterojunction bipolar transistors (HBTs) have been grown over a substrate temperature range of 280-450-degrees-C with Be base doping levels ranging from 2.0 X 10(19) to 1. 6 X 10(20) cm-3. We have determined that for a desired base doping level there exists an optimum growth temperature at which the Be is confined in the base and at the same time the dc current gain of the HBT is maximized.