BORON DELTA-DOPED SI METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

A working p-type Si metal semiconductor field-effect transistor struct ure, utilizing a boron delta-doped layer as the conducting channel, ha s been successfully fabricated. Based on Hall measurements, a hole mob ility bf 120 (180) cm2 V-1 s-1 at 300 (77) K has been obtained. The sh eet carrier density of the delta layer was estimated to be about 1. 8 X 10(12) cm-2. It is shown that the delta field-effect transistor exhi bits an extrinsic transconductance of 640 muS/mm for a gate length of 5 mum, and a high gate to drain breakdown voltage (> 18 V). By reducin g the gate length to 1 mum, a transconductance of up to 3.2 mS/mm is e xpected.