CHARACTERISTICS OF ELECTRON TRAPS IN IN0.5GA0.5P GENERATED BY RECOMBINATION-ENHANCED DEFECT REACTIONS

We report the observation of a new type of intrinsic defect in n-In0.5 Ga0.5P which can be generated by recombination enhanced defect reactio n (R.EDR) mechanism. It is observed that the increases of the concentr ations of this defect and of another native defect due to REDR have ne arly linear time dependence before saturation. This observation and ot her experimental results suggest that the two observed defects are com plex defects. Other electrical properties of these defects such as all oy broadening effect on the thermal ionization energy are also describ ed.