POLYTHIENYLENEVINYLENE THIN-FILM-TRANSISTOR WITH HIGH CARRIER MOBILITY

A thin-film transistor (TFT) with high carrier mobility has been fabri cated using precursor-route poly(2,5-thienylenevinylene) (PTV) as semi conductor. The carrier mobility has been determined to be 0.22 cm2/V s , which is in the same level of that of amorphous silicon TFT. It has also been made clear that the carrier mobility is linearly proportiona l to the conversion ratio from the insulated precursor polymer to pi-c onjugated PTV. The pi-conjugation length is crucial to obtain high car rier mobility in pi-conjugated polymer TFT.