ACCEPTOR DOPING IN ZNSE VERSUS ZNTE

Citation
Db. Laks et al., ACCEPTOR DOPING IN ZNSE VERSUS ZNTE, Applied physics letters, 63(10), 1993, pp. 1375-1377
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
10
Year of publication
1993
Pages
1375 - 1377
Database
ISI
SICI code
0003-6951(1993)63:10<1375:ADIZVZ>2.0.ZU;2-A
Abstract
It is a long-standing puzzle that ZnSe is difficult to dope p type, wh ile ZnTe-which is very similar to ZnSe-is very easily doped p type. We report ab initio calculations which show that the solubilities of Li and Na acceptors are much greater in ZnTe than the solubilities of the same acceptors in ZnSe. We trace the origin of this difference to the bonding properties of the acceptors with the neighboring chalcogens. Our results also explain the experimentally observed dependence on dop ant concentration of the dislocation density in p-type ZnSe epilayers grown on GaAs.