RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS USING THE GA-DOPED SPIN-ON GLASS-FILMS

We have studied rapid thermal annealing (RTA) of Si-implanted GaAs usi ng Ga-doped spin-on glass (SOG) film for the first time. Three kinds o f films such as Ga-doped SOG, undoped SOG, and SiO2 formed by the chem ical vapor deposition (CVD) method were compared. The annealed GaAs la yers were characterized by sheet resistance, capacitance-voltage (C-V) , deep level transient spectroscopy (DLTS), and photoluminescence (PL) measurements. The secondary ion mass spectroscopy (SIMS) measurement was also performed to investigate the atomic behavior at the insulatin g film/GaAs interface during annealing. Ga-doped SOG film as an anneal cap of GaAs offers activation efficiency as compared with CVD-SiO2 an d undoped SOG film. The PL spectra for the annealed sample with Ga-dop ed SOG cap exhibited the lowest intensity at 1.36 eV broad band emissi on, which suggests the suppression of the generation of Ga-vacancy rel ated acceptor level during annealing.