CHEMICAL-VAPOR-DEPOSITION OF ROUGH-MORPHOLOGY SILICON FILMS OVER A BROAD TEMPERATURE-RANGE

Growth of rough polycrystalline silicon films has been achieved on SiO 2 surfaces over a broad temperature range (greater-than-or-equal-to 10 0-degrees-C) using SiH4 chemical vapor deposition at low pressures (mT orr range), with smaller grain structure and roughness length scale ac hieved at lower temperatures. Rough morphology over a broad temperatur e range is attributed to the combination of nucleation-controlled init ial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).