ORIGIN OF CU-RICH PRECIPITATE FORMATION ON SUPERCONDUCTING FILMS - A COMPETITION BETWEEN NUCLEATION, OXIDATION, AND GROWTH-KINETICS

Citation
Jp. Locquet et al., ORIGIN OF CU-RICH PRECIPITATE FORMATION ON SUPERCONDUCTING FILMS - A COMPETITION BETWEEN NUCLEATION, OXIDATION, AND GROWTH-KINETICS, Applied physics letters, 63(10), 1993, pp. 1426-1428
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
10
Year of publication
1993
Pages
1426 - 1428
Database
ISI
SICI code
0003-6951(1993)63:10<1426:OOCPFO>2.0.ZU;2-O
Abstract
We have unraveled the growth mechanism of Cu-rich precipitates on the surface of c-axis-oriented DyBa2CU3O7 thin films. Despite the strong o xidation conditions present, the surface of c-axis DyBa2CU3O7 acts as an ideal nucleation site for Cu2O crystallites, whose (110) planes are parallel to the substrate surface. Once nucleated, they act as effect ive sinks for the rest of the deposited copper and form large crystals that revert to monoclinic CuO upon cooling. This result has important implications for all currently used thin film growth processes and in dicates that smooth surfaces can only be prepared under stringent comp osition control.