HIGH-RESOLUTION ELECTRON-MICROSCOPY OF SHORT-RANGE ORDERED STRUCTURE OF GA0.5IN0.5P

A short-range ordered structure of a semiconductor laser material Ga0. 5In0.5P was investigated by high-resolution electron microscopy togeth er with electron diffraction. A high-resolution electron microscope im age of Ga0.5In0.5P was processed to visualize a short-range ordered at omic arrangement. A model of the short-range ordered structure was obt ained by assuming the proportionality between the brightness of white dots in the image and the concentration of In in atomic columns parall el to the incident electron beam. Based on the structure model, diffus e scattering intensity was calculated and it was compared with the obs erved diffraction pattern.