EVALUATION OF OPTIMAL COLLECTOR PARAMETERS OF A TRANSISTOR WITH BURIED LAYER

Breakdown voltages of transistors with a buried layer are numerically calculated subject to the minimum collector resistance. In determinati on of breakdown voltages, both the thermally generated carriers within the collector-base depletion region and the carriers entering the jun ction from the emitter are considered. From the numerical results, emp irical expressions for optimized collector doping density N(C) and col lector width W(C) have been established. These relations have been fou nd to be of considerable practical value in designing epitaxial bipola r transistors with lightly doped collectors.