Pr. Suresh et M. Satyam, COMBINED EFFECT OF ALUMINUM DIFFUSION AND ANNEALING ON GB PROPERTIES IN CAST POLYSILICON, Solar energy materials and solar cells, 30(3), 1993, pp. 193-199
This paper describes the effect of aluminium diffusion into and anneal
ing of polycrystalline silicon on the grain boundary traps. It has bee
n shown that diffusion of aluminium at 700-degrees-C followed by annea
ling at a moderately higher temperature of about 450-degrees-C reduces
the density of trap states at the grain boundaries considerably.