OPTIMIZATION OF STRAINED-QUANTUM-WELL ING AAS GAAS HETEROSTRUCTURES FOR USE IN LASERS/

The first results on growing 9- and 11-layer InxGa1-xAs/GaAs/AlGaAs he terostructures by the atmospheric pressure MOCVD process for use in la ser diodes of 0.9-1.1 mum wavelength region are presented. Calculation s show that the necessary wavelength (e.g. lambda = 0.98 mum) can be o btained in a wide range of compound parameters (0.14 less-than-or-equa l-to x less-than-or-equal-to 0.4) and thickness (4 nm less-than-or-equ al-to L(z) less-than-or-equal-to 25 nm). The choice of parameters, dep ending on the growing process reproducibility, is discussed. The diode s produced, emitting at lambda = 0.95 - 1.016 mum, lack degradation in harsh tests (50 and 100 mW power in cw operation). This feature makes such diodes promising. Threshold currents are 40-55 mA, and the exter nal efficiency is approximately 0.2 W/A.