PASSIVE Q-SWITCHING OF ND-YAG LASERS BY USE OF BULK SEMICONDUCTORS

Authors
TSOU Y GARMIRE E CHEN W BIRNBAUM M ASTHANA R
Citation
Y. Tsou et al., PASSIVE Q-SWITCHING OF ND-YAG LASERS BY USE OF BULK SEMICONDUCTORS, Optics letters, 18(18), 1993, pp. 1514-1516
Citations number
9
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
18
Issue
18
Year of publication
1993
Pages
1514 - 1516
Database
ISI
SICI code
0146-9592(1993)18:18<1514:PQONLB>2.0.ZU;2-0
Abstract
We report passive Q switching of Nd:YAG lasers with the use of a bulk InGaAsP film, grown on an InP substrate by liquid-phase epitaxy, as an intracavity saturable absorber. The single Q-switched pulse had a max imum energy of 1.65 mJ with a 20-ns duration. The simple technology is easily extendible to any infrared solid-state laser.