OXIDATION-KINETICS OF REACTION-SINTERED SILICON-CARBIDE

Authors
CHAKRABARTI OP MUKERJI J
Citation
Op. Chakrabarti et J. Mukerji, OXIDATION-KINETICS OF REACTION-SINTERED SILICON-CARBIDE, Bulletin of Materials Science, 16(4), 1993, pp. 325-329
Citations number
13
Categorie Soggetti
Material Science
Journal title
Bulletin of Materials Science → ACNP
ISSN journal
02504707
Volume
16
Issue
4
Year of publication
1993
Pages
325 - 329
Database
ISI
SICI code
0250-4707(1993)16:4<325:OORS>2.0.ZU;2-7
Abstract
The oxidation kinetics of reaction-sintered silicon carbide has been s tudied over the temperature range 1200-degrees to 1350-degrees-C. The material has a bulk density of 3.00 g/cm3 and the unreacted Si content is 22.5% (v/v). The activation energy for oxidation is 28.75 +/- 2.61 kcal/mol. It is proposed that the diffusion of oxygen through the gro wing oxide film is the rate-controlling process.