Ma. Angadi et V. Thanigaimani, ELECTRICAL-CONDUCTION IN MNTE AND MNSE FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(1), 1993, pp. 120000001-120000004
The thickness dependence of die electrical resistivity of MnTe and MnS
e is reported for films of different compositions, deposited at differ
ent substrate temperatures and in the thickness range 25-180 nm. A com
puter-based technique is used within the framework of the Mayadas-Shat
zkes (MS) model to calculate p, R, l and rho0 by a computer iteration
and sorting process. The experimental data are in good agreement with
die MS model over the entire thickness range.