MORPHOLOGICAL AND ELECTRICAL MODIFICATIONS IN SILICON SUBMITTED TO HIGH-INTENSITY LASER IRRADIATION

Citation
O. Muller et R. Joeckle, MORPHOLOGICAL AND ELECTRICAL MODIFICATIONS IN SILICON SUBMITTED TO HIGH-INTENSITY LASER IRRADIATION, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 168(1), 1993, pp. 81-86
Citations number
25
Categorie Soggetti
Material Science
ISSN journal
09215093
Volume
168
Issue
1
Year of publication
1993
Pages
81 - 86
Database
ISI
SICI code
0921-5093(1993)168:1<81:MAEMIS>2.0.ZU;2-D
Abstract
In an effort to study the nature of the damage processes which occur w hen detectors for visible light are irradiated with high-power laser b eams, bulk (111) n-type (P doped) silicon samples were submitted to hi gh intensity 580 nm dye laser pulses for microsecond duration and the induced morphological (cracks, melting) as well as electrical (sheet r esistance) modifications were investigated. The irradiation was either in a variable diameter focused mode, or a uniform power density beam. The uniform illumination mode allows one to obtain more precise value s for the morphological degradation occurring with increasing fluence: from the first appearance of a white coating (over 1.7 J cm-2) to the progressive formation of cracks (from 5.5 J cm-2 to melting) before m elting occurs (at 10.7 J cm-2). A detailed study of the resistivity as a function of fluence is reported, using the latter optical regime, a nd it is shown that melting is accompanied by a strong increase in she et resistance (from 50 to 180 kOMEGA).