NEW UNIVERSAL RELATION CONCERNING 1 F NOISE

It is shown that the Hooge coefficient alpha(H) which characterizes th e 1/f noise in semiconductor materials and devices satisfies the follo wing relation: alpha(H)=betatau, where beta almost-equal-to 10(2)-5 X 10(3) s-1 is a coefficient and T is the charge carrier lifetime determ ined either by charge carrier capture at some recombination centers or traps or by carrier diffusion to the surface or to the electrical con tacts where carriers recombine. The idea is discussed that some non-tr ivial slow relaxation processes which are accompanied by 1/f fluctuati ons may occur in the lattice of a semiconductor.