APPARATUS FOR THE THERMAL CHARACTERIZATION OF HIGH-CONDUCTIVITY SUBSTRATES

Authors
PARIS P HAUSSONNE JM LOSTEC J
Citation
P. Paris et al., APPARATUS FOR THE THERMAL CHARACTERIZATION OF HIGH-CONDUCTIVITY SUBSTRATES, American Ceramic Society bulletin, 72(5), 1993, pp. 77-82
Citations number
9
Categorie Soggetti
Material Science, Ceramics
Journal title
American Ceramic Society bulletin → ACNP
ISSN journal
00027812
Volume
72
Issue
5
Year of publication
1993
Pages
77 - 82
Database
ISI
SICI code
0002-7812(1993)72:5<77:AFTTCO>2.0.ZU;2-3
Abstract
The thermal characterization of aluminum nitride (AlN) substrates is a current problem in microelectronics. Conventional methods have had li mitations in sample size or cost. To overcome these limitations, a com mercial devices is now available that is based on the principle of mea suring the thermal flux passing through a sample submitted to a known temperature gradient.