DEFECT-FORMING IN SIXGE1-X GE(111) HETERO STRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE/

Citation
Vi. Vdovin et al., DEFECT-FORMING IN SIXGE1-X GE(111) HETERO STRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE/, Kristallografia, 38(4), 1993, pp. 269-271
Citations number
1
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00234761
Volume
38
Issue
4
Year of publication
1993
Pages
269 - 271
Database
ISI
SICI code
0023-4761(1993)38:4<269:DISGHS>2.0.ZU;2-9