MEASUREMENT OF ORGANIC-MATTER ON SI WAFER BY THERMAL-DESORPTION SPECTROSCOPY

Organic matter on a Si surface was investigated using thermal desorpti on spectroscopy (TDS). It was clarified that acetone, ethanol and tolu ene contaminants on a bare Si surface can be detected by the TDS syste m, ESCO EMD-WA1000K, and these organic contaminants have different des orption temperatures and fragment patterns. Therefore organic contamin ants on Si wafers were thought to be separated by desorption temperatu re, and characterized from the fragment pattern at that desorption tem perature. Here, the desorption temperature is thought to be proportion al to the activation energy for desorption. Thus bonding strength betw een organic contaminants and the Si surface is qualitatively estimated from the desorption temperature.