CONTINUOUS GAAS FILM GROWTH ON EPITAXIAL SI SURFACE IN INITIAL-STAGE OF GAAS SI HETEROEPITAXY/

Improvements in the initial stage of GaAs growth on the epitaxial sili con surface without high-temperature Si surface treatment and in the G aAs-Si interface have been observed for the first time by transmission electron microscopy (TEM). Plan-view and cross-sectional TEM images s how that initial GaAs layers (10-nm-thick GaAs layer grown at 400-degr ees-C) on Si continuously cover the whole gi surface. We also observed dislocations in 100-nm-thick GaAs layers grown at 650-degrees-C after 400-degrees-C growth. The number of dislocations was considerably les s than that in conventional thermally treated mechanochemically polish ed Si samples. These observations show that the epitaxial Si surface h as the effect of improving the initial stage of GaAs growth on Si as w ell as the GaAs-Si inter face.