FORMATION OF CRYSTALLINE SIC BURIED LAYER BY HIGH-DOSE IMPLANTATION OF MEV CARBON-IONS AT HIGH-TEMPERATURE

A buried layer of crystalline SiC in silicon wafer is synthesized by 1 .5 MeV C+ implantation at a dose of 1.5 x 10(18) ions/cm2 at a high te mperature of 880-degrees-C. The infrared absorption spectrum and the X -ray diffraction pattern of this sample show formation of 3C-type SiC crystal. The pole figures of X-ray diffraction show that crystallograp hic orientation of the SiC buried layer is aligned along the lattice o f the Si substrate, that is, topotaxial internal growth of crystalline SiC occurs in a single crystal of Si during the high-temperature ion implantation.