ALINAS GAINAS ON INP HEMTS FOR LOW-POWER SUPPLY VOLTAGE OPERATION OF HIGH POWER-ADDED EFFICIENCY MICROWAVE-AMPLIFIERS/

Authors
LARSON LE MATLOUBIAN MM BROWN JJ BROWN AS RHODES R CRAMPTON D THOMPSON M
Citation
Le. Larson et al., ALINAS GAINAS ON INP HEMTS FOR LOW-POWER SUPPLY VOLTAGE OPERATION OF HIGH POWER-ADDED EFFICIENCY MICROWAVE-AMPLIFIERS/, Electronics Letters, 29(15), 1993, pp. 1324-1326
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1324 - 1326
Database
ISI
SICI code
0013-5194(1993)29:15<1324:AGOIHF>2.0.ZU;2-B
Abstract
High power-added efficiency microwave power amplifier results are repo ned for AlInAs/GaInAs on InP HEMTs operated at relatively low power su pply voltages (2.5-3V). C-band power amplifiers are reported with powe r-added efficiencies as high as 67%, and output powers between 200 and 300 mW. This excellent performance at low power supply voltages is at tributed to the high gain and low access resistances of the devices, w hich leads to a high drain efficiency despite the low power supply vol tage.