SILICON-CARBIDE DIAMOND HETEROSTRUCTURE RECTIFYING CONTACTS

The first results pertaining to the fabrication of an optically transp arent SiC contact on naturally occurring semiconducting diamond C(001) substrates are reported. The SiC layer is formed by electron-beam eva poration of an Si film followed by a two-step high-temperature anneali ng process. By employing Al dots as a metal mask, mesa heterostructure diodes comprising Al/SiC/C(001) were fabricated by etching in an elec tron cyclotron resonance oxygen plasma. Rectifying I-V characteristics were obtained from the mesa heterostructures.