EFFECT OF STRAIN ON MICROWAVE NOISE CHARACTERISTICS IN IN0.52AL0.48ASINXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.80) HEMTS/

Authors
CHOUGH KB HONG WP FLOREZ L SONG JI
Citation
Kb. Chough et al., EFFECT OF STRAIN ON MICROWAVE NOISE CHARACTERISTICS IN IN0.52AL0.48ASINXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.80) HEMTS/, Electronics Letters, 29(15), 1993, pp. 1338-1340
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1338 - 1340
Database
ISI
SICI code
0013-5194(1993)29:15<1338:EOSOMN>2.0.ZU;2-#
Abstract
The RF noise characteristics of lattice-matched and strained In0.52Al0 .48As/InxGa1-xAs HEMTs grown by MBE have been investigated. The indium composition of the InxGa1-xAs channel was varied from x = 0.53 to 0.8 0. While the gain and speed performance were significantly improved wi th the increase of indium composition as expected, the noise character istics showed that the microwave noise increases with the increase of the indium composition.