SENSITIVITY OF 0.1-MU-M MOSFETS TO MANUFACTURING FLUCTUATIONS

Authors
SITTE R DIMITRIJEV S HARRISON HB
Citation
R. Sitte et al., SENSITIVITY OF 0.1-MU-M MOSFETS TO MANUFACTURING FLUCTUATIONS, Electronics Letters, 29(15), 1993, pp. 1345-1346
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1345 - 1346
Database
ISI
SICI code
0013-5194(1993)29:15<1345:SO0MTM>2.0.ZU;2-F
Abstract
A sensitivity analysis of 0.1 mum MOSFETs to manufacturing fluctuation s has been carried out. The analysis reveals that the electrical param eter sensitivity in deep submicrometre devices differs from the curren tly produced micrometre size devices, making a revision of the validit y of conventional semiconductor manufacturing heuristics for future te chnology mandatory.