(AL0.5GA0.5)0.65IN0.35P GA0.65IN0.35P DOUBLE-HETEROSTRUCTURE ORANGE LIGHT-EMITTING-DIODES/

Authors
LIN JF WU MC JOU MJ CHANG CM LEE BJ
Citation
Jf. Lin et al., (AL0.5GA0.5)0.65IN0.35P GA0.65IN0.35P DOUBLE-HETEROSTRUCTURE ORANGE LIGHT-EMITTING-DIODES/, Electronics Letters, 29(15), 1993, pp. 1346-1347
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1346 - 1347
Database
ISI
SICI code
0013-5194(1993)29:15<1346:(GDOL>2.0.ZU;2-0
Abstract
Visible light-emitting diodes (LEDs) emitting at 615 nm and employing the AlGaInP/GaInP double heterostructure (DH) grown on a lattice-match ed GaAs0.7P0.3 substrate have been fabricated for the first time. The external quantum efficiency of 0.156% for the orange LEDs can be achie ved by introducing the GaP material as the current spreader and window layer for the DH LEDs.