HIGH-FREQUENCY QUASIPLANAR GAINP GAAS HBT WITH CBE SELECTIVE COLLECTOR CONTACT REGROWTH/

Authors
ZERGUINE D LAUNAY P ALEXANDRE F BENCHIMOL JL ETRILLARD J
Citation
D. Zerguine et al., HIGH-FREQUENCY QUASIPLANAR GAINP GAAS HBT WITH CBE SELECTIVE COLLECTOR CONTACT REGROWTH/, Electronics Letters, 29(15), 1993, pp. 1349-1350
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1349 - 1350
Database
ISI
SICI code
0013-5194(1993)29:15<1349:HQGGHW>2.0.ZU;2-0
Abstract
Quasiplanar GaInP/GaAs heterojunction bipolar transistors (HBTs) with selective regrowth of the collector contact are reported. Such devices have a planar surface topology which should allow large scale integra tion. The multilayer HBT structure and the selective regrown collector contact are realised by chemical beam epitaxy (CBE). Cutoff frequency and maximum oscillation frequency of 30 and 25 GHz, respectively, hav e been obtained for devices with 2 x 15 mum2 emitter-base junction are a.