NEW EXPERIMENTAL-TECHNIQUE FOR FAST AND ACCURATE MOSFET THRESHOLD EXTRACTION

Authors
CORSI F MARZOCCA C PORTACCI GV
Citation
F. Corsi et al., NEW EXPERIMENTAL-TECHNIQUE FOR FAST AND ACCURATE MOSFET THRESHOLD EXTRACTION, Electronics Letters, 29(15), 1993, pp. 1358-1360
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1358 - 1360
Database
ISI
SICI code
0013-5194(1993)29:15<1358:NEFFAA>2.0.ZU;2-V
Abstract
Threshold voltage extraction for MOS devices is translated into the ea sier task of locating a minimum in a derived function of I(DS) and V(G S). The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool i nstead of more costly optimisation based techniques.