MOCVD-GROWN INALAS INGAAS HEMTS WITH FT = 200 GHZ/

The performance of 0.15 mum gate InAlAs/InGaAs HEMTs grown by MOCVD is reported. The HEMT layer structure exhibited excellent transport prop erties, indicating the high quality of the heterointerface. The device s fabricated using a T-gate process showed an f(T) of 200 GHz and f(ma x) of 230 GHz extrapolated from 26 GHz at -6 dB/octave. These are the best speed performances of any MOCVD-grown FETs. The results clearly d emonstrate that MOCVD is a powerful growth technique for materials for high-speed applications.