A silicon-on-insulator Schottky diode with an etched mesa has been fab
ricated on silicon direct bonded wafer which exhibits a two-fold impro
vement in breakdown voltage. The fabrication method using V-groove etc
hing requires no additional mask step. The breakdown voltage of the Sc
hottky diodes with an etched mesa has been increased to 180 V, whereas
it is 90 V for the planar Schottky diode.