INCREASED BREAKDOWN VOLTAGE OF SILICON-ON-INSULATOR SCHOTTKY DIODES

Authors
KANG BR YOON SN CHO YH CHA SI CHOI YI
Citation
Br. Kang et al., INCREASED BREAKDOWN VOLTAGE OF SILICON-ON-INSULATOR SCHOTTKY DIODES, Electronics Letters, 29(15), 1993, pp. 1381-1382
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
15
Year of publication
1993
Pages
1381 - 1382
Database
ISI
SICI code
0013-5194(1993)29:15<1381:IBVOSS>2.0.ZU;2-2
Abstract
A silicon-on-insulator Schottky diode with an etched mesa has been fab ricated on silicon direct bonded wafer which exhibits a two-fold impro vement in breakdown voltage. The fabrication method using V-groove etc hing requires no additional mask step. The breakdown voltage of the Sc hottky diodes with an etched mesa has been increased to 180 V, whereas it is 90 V for the planar Schottky diode.