DC AND TEMPERATURE-DEPENDENT CHARACTERISTICS OF INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH QUATERNARY COLLECTOR

Authors
MCALISTER SP ABID ZE MCKINNON WR DAVIES M
Citation
Sp. Mcalister et al., DC AND TEMPERATURE-DEPENDENT CHARACTERISTICS OF INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH QUATERNARY COLLECTOR, Electronics Letters, 29(16), 1993, pp. 1415-1417
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
16
Year of publication
1993
Pages
1415 - 1417
Database
ISI
SICI code
0013-5194(1993)29:16<1415:DATCOI>2.0.ZU;2-L
Abstract
The Letter reports the first study of the temperature dependence of th e DC characteristics of InP-band double heterostructure bipolar transi stors which have a quaternary collector. The quaternary layer was spac ed away from the base-collector junction to improve the HBT characteri stics. The devices exhibited useful gain over seen orders of magnitude of current and had breakdown voltages of approximately 8 V. The DC ga in decreased with decreasing temperature whereas the ideality factors increased.