PASSIVE MODELOCKING OF SEMICONDUCTOR-LASERS WITH TUNABLE GROUP-VELOCITY DISPERSION CAVITY

Citation
A. Azouz et al., PASSIVE MODELOCKING OF SEMICONDUCTOR-LASERS WITH TUNABLE GROUP-VELOCITY DISPERSION CAVITY, Electronics Letters, 29(16), 1993, pp. 1437-1438
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
29
Issue
16
Year of publication
1993
Pages
1437 - 1438
Database
ISI
SICI code
0013-5194(1993)29:16<1437:PMOSWT>2.0.ZU;2-T
Abstract
Passive (hybrid) modelocking of AlGaAs lasers in an external cavity wi th high tunable group-velocity-dispersion (GVD) is reported. An intern al grating compressor is used to continuously vary the intracavity GVD while a second grating compressor serves to compress the output pulse s. Modelocking is only found to occur for positive (normal) GVD. At op timum pulse compression, the dispersion of the external compressor is measured to linearly increase with intracavity dispersion. The large c hirp amplitude detected at nearly-zero intracavity GVD as well as the general evolution of pulse parameters are shown to be well described b y a modelocked laser model including fast laser pin saturation.