ENHANCED STATIC PERFORMANCE OF ALGAAS GAAS HBTS BY FLUORIDE SURFACE-TREATMENT/

Authors
ERBEN U SCHUMACHER H SEILER U KOENIG E
Citation
U. Erben et al., ENHANCED STATIC PERFORMANCE OF ALGAAS GAAS HBTS BY FLUORIDE SURFACE-TREATMENT/, Electronics Letters, 29(16), 1993, pp. 1489-1491
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
16
Year of publication
1993
Pages
1489 - 1491
Database
ISI
SICI code
0013-5194(1993)29:16<1489:ESPOAG>2.0.ZU;2-3
Abstract
Using a combination of wet and dry chemical treatments, the parasitic surface current between the base and emitter of AlGaAs/GaAs heterojunc tion bipolar transistors (HBTs) has been suppressed by more than two o rders of magnitude. This treatment opens up a variety of applications over a wide range of collector currents for selfaligned microwave AlGa As/GaAs HBTs.