MAPPING OF MOBILE CHARGES ON INSULATOR SURFACES WITH THE ELECTROSTATIC FORCE MICROSCOPE

Authors
DOMANSKY K LENG Y WILLIAMS CC JANATA J PETELENZ D
Citation
K. Domansky et al., MAPPING OF MOBILE CHARGES ON INSULATOR SURFACES WITH THE ELECTROSTATIC FORCE MICROSCOPE, Applied physics letters, 63(11), 1993, pp. 1513-1515
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
11
Year of publication
1993
Pages
1513 - 1515
Database
ISI
SICI code
0003-6951(1993)63:11<1513:MOMCOI>2.0.ZU;2-T
Abstract
Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor stru ctures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distributio n of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p-n junction and an open-gate field-effect trans istor. The surface charge distribution and topography are imaged simul taneously on a micrometer scale.