BERYLLIUM DELTA-DOPING STUDIES IN INP AND GA0.47IN0.53AS DURING METALORGANIC MOLECULAR-BEAM EPITAXY

Authors
RITTER D HAMM RA PANISH MB GEVA M
Citation
D. Ritter et al., BERYLLIUM DELTA-DOPING STUDIES IN INP AND GA0.47IN0.53AS DURING METALORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 63(11), 1993, pp. 1543-1545
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
11
Year of publication
1993
Pages
1543 - 1545
Database
ISI
SICI code
0003-6951(1993)63:11<1543:BDSIIA>2.0.ZU;2-X
Abstract
A secondary ion mass spectroscopy study of delta and bulk doped layers demonstrates that the incorporation efficiency of Be in Ga0.47In0.53A s and InP during metalorganic molecular beam epitaxy is much lower tha n unity. This effect is attributed to the removal of Be atoms from the surface by the organic gases in the growth chamber. The upper limit f or delta doping of Ga0.47In0.53As before the onset of diffusion is 7 X 10(12) cm-2, and in InP it is less than 5 X 10(11) cm-2.