TRANSPORT PHENOMENA IN N-MNXHG1-XTE CD0.96ZN0.04TE EPITAXIAL-FILMS/

The results of an experimental study of samples of MnxHg1-xTe films gr own by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presente d. It shows that, as a result of the diffusion of cadmium from the sub strate, a CdxMnyHg1-x-yTe film with a variable band-gap layer is forme d close to the (epitaxial-film)-substrate interface. The appearance of this variable band gap is revealed by the transport phenomena. The te mperature dependence of the band gap E(g)(T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility . It is shown that averaging the semiempirical dependences for the ter nary compounds with the extreme compositions, using the virtual-crysta l approximation, can produce large errors when determining E(g)(T) in a specific semiconductor. (C) 1997 American Institute of Physics.