DEFECTS IN INTRINSIC AND PSEUDODOPED AMORPHOUS HYDRATED SILICON

The data on the dark conductivity and photoconductivity of a-Si:H film s obtained by various methods in the soft-deposition regime are presen ted. It is shown that, regardless of the substrate temperature, the ma terial obtained in this regime is intrinsic. Deviation from the soft-d eposition regime results in the growth of pseudodoped a-Si:H, with an increased density of defects (dangling Si-Si bonds) and with inhomogen eous structure. The defects in intrinsic and pseudodoped a-Si:H are fo und, respectively, in D-0 and D+ states. (C) 1997 American Institute o f Physics.