STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE

This paper discusses how the structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition are a ffected by the growth conditions. It shows that the films can be impro ved by applying to the substrate a voltage in the range 50-300 V, nega tive with respect to the silicon source. Such films also have higher c onductivity. The results are explained in terms of bombardment of the growing film by dopant ions. (C) 1997 American Institute of Physics.