SHUBNIKOV-DE HAAS OSCILLATIONS IN HGSE(FE) AND HGSE(CO) UNDER HYDROSTATIC-PRESSURE

Citation
Ea. Neifeld et al., SHUBNIKOV-DE HAAS OSCILLATIONS IN HGSE(FE) AND HGSE(CO) UNDER HYDROSTATIC-PRESSURE, Semiconductors, 31(3), 1997, pp. 261-264
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
3
Year of publication
1997
Pages
261 - 264
Database
ISI
SICI code
1063-7826(1997)31:3<261:SHOIHA>2.0.ZU;2-8
Abstract
Shubnikov-de Haas oscillations have been studied in the gapless semico nductors HgSe[Fe] and HgSe[Co] under hydrostatic pressure. It is shown that in HgSe[Fe] an increase in pressure results in a decrease in the electron density, which fits within the framework of the Kane model w ith constant Fermi energy. In contrast, in HgSe[Co] the electron densi ty is independent of the pressure, i.e., Fermi-levei pinning is absent . (C) 1997 American Institute of Physics.