ANOMALIES IN THE LOW-TEMPERATURE THERMOELECTRIC-POWER OF P-BI2TE3 ANDTE ASSOCIATED WITH TOPOLOGICAL ELECTRONIC-TRANSITIONS UNDER PRESSURE

Thermoelectric power measurements have been carried out for the narrow -band semiconductors p-Bi2Te3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with th e data obtained by oscillation methods. These correlations allow one t o use the thermoelectric power to search for topological electronic tr ansitions in semiconductors. (C) 1997 American Institute of Physics.