FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION

Authors
MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation
Am. Myasnikov et al., FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION, Semiconductors, 31(3), 1997, pp. 279-282
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
3
Year of publication
1997
Pages
279 - 282
Database
ISI
SICI code
1063-7826(1997)31:3<279:FOAQBD>2.0.ZU;2-D
Abstract
The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron cl ustering processes which proceed more efficiently in the region of the maximum of the implanted impurity distribution and at the boundaries of the ion irradiation region. (C) 1997 American Institute of Physics.