DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES/

Authors
GWO S CHAO KJ SHIH CK SADRA K STREETMAN BG
Citation
S. Gwo et al., DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES/, Physical review letters, 71(12), 1993, pp. 1883-1886
Citations number
23
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
71
Issue
12
Year of publication
1993
Pages
1883 - 1886
Database
ISI
SICI code
0031-9007(1993)71:12<1883:DMOEAA>2.0.ZU;2-L
Abstract
By using the prototypical Al0.3Ga0.7As/GaAs system, we demonstrate the unique capability of scanning tunneling microscopy to directly map ou t detailed electronic structure across heterojunctions. Three novel ap plications are reported: (1) precise determination of band offsets, (2 ) measurement of asymmetrical electronic transition widths between the normal and inverted interfaces, and (3) mapping of multiple-valley ba nd structures. Important implications of these results are discussed.