SILICON MOS TRANSCONDUCTANCE SCALING INTO THE OVERSHOOT REGIME

Simulations incorporating velocity overshoot are used to derive the de pendence of deep-submicrometer MOS transconductance on low-field mobil ity mu(eff) and channel length L(ch). In contrast to strict velocity s aturation, saturated transconductance departs from a strict mu(eff)/L( ch) dependence when overshoot is considered. Constraints on mu(eff) de rived from conventional scaling laws together with strong mu(eff) depe ndencies in these regimes emphasize the importance of low-field invers ion layer control and optimization. Transconductance in saturation is shown to approach a well-defined limit for very high mu(eff), proporti onal to L(ch)-2/3.