1.7-PS, MICROWAVE, INTEGRATED-CIRCUIT-COMPATIBLE INAS ALSB RESONANT-TUNNELING DIODES/

Authors
OZBAY E BLOOM DM CHOW DH SCHULMAN JN
Citation
E. Ozbay et al., 1.7-PS, MICROWAVE, INTEGRATED-CIRCUIT-COMPATIBLE INAS ALSB RESONANT-TUNNELING DIODES/, IEEE electron device letters, 14(8), 1993, pp. 400-402
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
8
Year of publication
1993
Pages
400 - 402
Database
ISI
SICI code
0741-3106(1993)14:8<400:1MIIAR>2.0.ZU;2-M
Abstract
Microwave integrated-circuit-compatible InAs/AlSb resonant tunneling d iodes (RTD's) have been fabricated. The resulting devices have peak cu rrent densities of 3.3 x 10(5) A/cm2 with peak-to-valley ratios (PVR's ) of 3.3. Switching transition times of 1.7 ps are measured using elec tro-optic sampling techniques.