A promising new 3-D sidewall flash EPROM cell has been implemented in
a novel memory array. The sidewall cell is a single-transistor stacked
gate cell built on the sidewalls of a silicon pillar. The gates surro
und the pillar and current flows vertically from top to bottom of the
pillar. The cell size approaches the square of the minimum pitch and i
s less than 40% of the conventional NOR-type structure. The cell and a
rray architecture promise to be highly scalable.