A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY

Authors
Citation
H. Pein et Jd. Plummer, A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY, IEEE electron device letters, 14(8), 1993, pp. 415-417
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
07413106
Volume
14
Issue
8
Year of publication
1993
Pages
415 - 417
Database
ISI
SICI code
0741-3106(1993)14:8<415:A3SFEC>2.0.ZU;2-S
Abstract
A promising new 3-D sidewall flash EPROM cell has been implemented in a novel memory array. The sidewall cell is a single-transistor stacked gate cell built on the sidewalls of a silicon pillar. The gates surro und the pillar and current flows vertically from top to bottom of the pillar. The cell size approaches the square of the minimum pitch and i s less than 40% of the conventional NOR-type structure. The cell and a rray architecture promise to be highly scalable.